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Dr. Yuichi Minoura -- November 28, 2011, 1:30PMIn this study, we propose copper oxide (CuOx) edge-termination for GaN-based Schottky barrier...
Copper Oxide Edge-termination for GaN Schottky Barrier Diodes with Low Turn-on Voltage
Marya Lieberman -- February 08, 2005, 01:30AMTop-down lithography can create patterns down to about 10 nm in size. bottom-up synthesis and...
Top-down meets bottom-up
Dr. Joseph J. Nahas -- January 26, 2004, 4:00PMMagnetoresistive Random Access Memory (MRAM) is a promising, maturing non-volatile memory...
Magnetoresistive Random Access Memory (MRAM)