Home > Seminars > Electrically Driven Electron Spin Resonance Mediated by Spin-Orbit Coupling in a Silicon Quantum Dot

Electrically Driven Electron Spin Resonance Mediated by Spin-Orbit Coupling in a Silicon Quantum Dot


8/24/2017 at 1:30PM


8/24/2017 at 2:30PM


258 Fitzpatrick Hall


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Greg Snider

Greg Snider

VIEW FULL PROFILE Email: gsnider@nd.edu
Phone: 574-631-4148
Website: http://www.nd.edu/~gsnider/
Office: 275 Fitzpatrick Hall


Department of Electrical Engineering Professor and Director Graduate Studies
My research in the last few years has focused on the design, fabrication, and measurements of micro and nanoelectronic devices. In the micro regime, my group works on CMOS circuits to study packaging issues, as well as to interface CMOS to nano devices. On the nano side, my research focuses on ...
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We demonstrate electric dipole spin resonance (EDSR) for single electrons accumulated in a silicon quantum dot electrically defined at the corner of a nanowire field effect transistor. The EDSR spectrum consist in four lines which are accurately simulated by tight binding calculations of our device. The experiment and its associated model unveiled that EDSR results from the interplay between valley mixing and spin-orbit coupling. Only the four ground states (two spin-two valleys) are involved, other excited orbital states lying far above in energy (singlet-triplet spacing of 1.9 meV).  EDSR is possible only when states with different valleys (valley splitting of 36ueV) and spins are nearly degenerate and when the quantum dot is of low symmetry (to couple different valley states by electric field). These conditions are realized in the specific geometry of our quantum dots based on CMOS trigate technology. This opens a road to design Silicon-on-insulator intrinsic quantum dots where the electron spin is rotated by the RF field applied to the control gate and where the strength of the spin-orbit coupling is finely tuned by the design parameters and the substrate bias.  Ref: arXiv:1708.02903v1

Seminar Speaker:

Marc Sanquer

Marc Sanquer


Dr. Marc Sanquer is the head of the Laboratory on Quantum Electronic Transport and Superconductivity (LaTEQS) at CEA-INAC (Grenoble). He completed his PhD in physics at the University of Paris-Sud-Orsay in 1985 and joined the Atomic Energy Council (CEA) at Saclay in the research staff, working on mesoscopic quantum physics since 1988. In 1996 he joined the INAC, where he focused on the electronic correlations - including Coulomb blockade- and interferences effects in quantum electronic systems. Since 1997 he developed collaboration with silicon microelectronics laboratories (CEA-LETI and STMicroelectronics) and oriented his research in the direction of ultimate CMOS devices which gives the opportunity to study new quantum effects in few electrons silicon devices and specifically the CMOS qubit. He is co-author of approximately 150 scientific publications.