Home > Seminars > III-V’s for CMOS: Materials and Process Challenges

III-V’s for CMOS: Materials and Process Challenges


4/17/2015 at 12:30PM


4/17/2015 at 1:30PM


126 DeBartolo Hall


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Sergei Rouvimov

Sergei Rouvimov

VIEW FULL PROFILE Email: Sergei.Rouvimov.1@nd.edu
Phone: 574-631-0226
Office: 233 Stinson Remick Hall


Department of Electrical Engineering Research Associate Professor
College of Engineering Research Associate Professor
The research activities of Dr. Rouvimov are related to electron microscopy material science and nano-technology in collaboration with many research groups inside and outside of Notre Dame.  Currently electron microscopy is a key research technique for many bio, materials science and device ...
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InGaAs n-type MOSFETs have been recently developed and shown significant electron transport improvements over Si and SiGe.  Realization of low power CMOS circuits with compatible fabrication processes and materials requires a III-V p-channel material system with parameters comparable to III-As’s.  InGaSb is a potential replacement for conventional SiGe and future strained Ge technologies where a low “in-plane” heavy hole effective mass and high hole mobility can be further enhanced through strain in quantum well engineering. The materials, interface properties, technological challenges and recent results on n-type InGaAs and p-type InGaSb channels will be discussed.

Seminar Speaker:

Dr. Serge Oktyabrsky

Dr. Serge Oktyabrsky

University at Albany

Dr. S. Oktyabrsky has received his Ph.D. degree in Solid State Physics from Lebedev Physics Institute, Moscow, Russia, in 1988.  He joined the University at Albany – SUNY in 1998, and is currently a Professor and a leader of a compound semiconductor team at the College of Nanoscale Science and Engineering which is now a part of the SUNY Polytechnic Institute. His primary expertise is in the MBE technology of group III-V nanostructures, semiconductor materials and devices; he authored over 230 papers in these fields. His recent research focuses on quantum confined structures, photonic devices, group III-arsenide/antimonide MOSFETs.