Home > Seminars > Semiconducting Nanowires – From Materials to Devices

Semiconducting Nanowires – From Materials to Devices


10/9/2014 at 11:00AM


10/9/2014 at 12:00PM


315 Stinson Remick Hall


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Alan Seabaugh

Alan Seabaugh

VIEW FULL PROFILE Email: aseabaug@nd.edu
Phone: 574-631-4473
Website: http://www.nd.edu/~nano
Office: 230A Fitzpatrick Hall
Curriculum Vitae


Department of Electrical Engineering Frank M. Freimann Chair Professor
College of Engineering Frank M. Freimann Chair Professor
Research Interests: What limits density, speed, power, linearity, gain, noise, and efficiency in devices? What new device capabilities can boost electronic system performance?  Current research: tunnel field-effect transistors, atomically-thin transistors, ionic and ferroelectric memory, self ...
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Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on Si thus opening up new possibilities for the design and fabrication of electronic and optoelectronic devices. In particular, the nanowire geometry allows the growth of abrupt heterostructures with large lattice mismatch and offers an ideal geometry for field-effect transistors (FETs) from an electrostatics perspective. These characteristics are especially important for tunnel FETs (TFETs) which are being considered the most promising steep slope devices for low power applications. TFETs can achieve a subthreshold swing of less than 60 mV/dec and are thus attractive for low-voltage operation thereby offering significant power dissipation savings.

In this talk I will give an overview about our activities in the field of semiconducting nanowires. I will briefly review our work on III-V nanowire growth including doping and material characterization, demonstrating the challenges and opportunities of the nanowire approach. In addition, device fabrication and electrical characterization of nanowire-based devices such as FETs, tunnel diodes and TFETs will be discussed.

Seminar Speaker:

Heike Riel

Heike Riel

IBM Research - Zurich


Heike Riel is IBM Fellow and the Manager of the Materials Integration and Nanoscale Devices Group at IBM Research – Zurich. She is responsible for projects in the area of III-V semiconductors including nanowires for applications in electronics, optoelectronics and energy harvesting and molecular electronics. Her research focuses on new materials and novel device concepts for futurenanoelectronics in particular steep slope devices for energy efficient computation.

Heike Riel studied physics at the University of Friedrich-Alexander Erlangen-Nuremberg (Germany) and received a PhD from the University of Bayreuth (Germany) in 2003 for her work on the optimization of multilayer organic lightemitting devices. After an internship at the Hewlett-Packard Research Laboratory,Palo Alto, she joined the IBM Zurich Research Lab in 1998 as a PhD student, andbecame a Research Staff Member in 2003. Since 2008 she has been leading the Nanoscale Electronics Group and in 2013 she became IBM Fellow. In 2011 Heikehas graduated with an MBA from Henley Business school.For her outstanding scientific contributions Heike was elected by Technology Review, MIT’s Magazine of Innovation, to the TR100, the annual list of theworld’s 100 Top Young Innovators in September 2003 and she received the 2005 Applied Physics Award of the Swiss Physical Society. In June 2012 Heike Riel received the award in the category “Technical or Scientific Innovation” which was awarded by the Swiss Association of Women in Engineering (SVIN) on the occasion of their 20th anniversary. In 2013 she was offered a Humboldt Professorship. She has authored more than 95 publications and filed more than 30 patents.